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Visualization of Dielectric Response Function in Compound Semiconductors



The dielectric response function describes the linear behavior of semiconductors to electric fields that vary with time and space..


The dielectric response function is essential to understanding the wide range of many-body properties of semiconductors, especially for the case of semiconductors that contain combinations of n-type and p-type dopants. As shown below, calculations and interpretations of Raman spectral lines shapes involve the complex dielectric response function that depends on the frequency and wavelength of electric fields. Raman spectra have a number of features that are consequences of the semiconductor band structure and many-body effects. Developing a theory that contains these features in Raman spectra requires accurate calculations of the dielectric response function with many-body effects.



(bullet) Herbert S. Bennett and Howard K. Hung, Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide http://nvl.nist.gov/pub/nistpubs/jres/108/3/cnt108-3.htm, NIST Journal of Research, 108 (3), May-June, 2003, pp. 193-197.
(bullet) http://math.nist.gov/mcsd/savg/papers/index.html


(bullet) Collaborating Scientists: Herbert S. Bennett
(bullet) Collaborating Scientists: Herbert S. Bennett; Howard K. Hung
(bullet) Visualization: Terence J. Griffin Howard K. Hung
(bullet) Group Leader: Judith E. Terrill

This figure summarizes the computed theoretical calculations of
the real part of the complex electric susceptibility for j-type GaAs
with a dopant density of 10e18 cm-3 and at a temperature of 300K.
This figure summarizes the computed theoretical calculations of the real part of the complex electric susceptibility for j-type GaAs with a dopant density of 10e18 cm-3 and at a temperature of 300K.


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Date created: 2001-10-31, Last updated: 2011-01-12.
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