Applied Computational Mathematics Division


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Emerging Devices and Materials for Beyond CMOS

Eric Vogel
Electronics and Electrical Engineering Laboratory, Semiconductor Electronics Division

Tuesday, October 5, 2004 15:00-16:00,
NIST North (820), Room 145
Gaithersburg
Tuesday, October 5, 2004 13:00-14:00,
Room 4550
Boulder

Abstract: The International Technology Roadmap for Semiconductors predicts that the minimum feature size of silicon CMOS technology will approach 20 nm as early as 2010. As silicon CMOS technology scales beyond these dimensions, new device structures and computational paradigms will be required to replace and augment standard CMOS devices for ULSI circuits. These possible emerging technologies span the realm from transistors made from silicon nanowires to devices made from nanoscale molecules. One theme that pervades these seemingly disparate emerging technologies is that the electronic properties of these nanodevices are extremely susceptible to small perturbations in structural and material properties such as dimension, structure, roughness, and defects. The extreme sensitivity of electronic properties to nanoscale physical properties defines a significant need for precise metrology and the need for computational tools for nanoscale materials and devices. I will review these possible emerging technologies and provide an overview of their metrology and computational requirements.

Speaker Bio: Eric M. Vogel is currently Group Leader of the CMOS and Novel Devices Group in the Semiconductor Electronics Division, Electronics and Electrical Engineering Laboratory, NIST, and is Director of the NIST Advanced Measurement Laboratory Nanofabrication Facility. He received the PhD degree in 1998 in Electrical Engineering from North Carolina State University. His group performs research and development for the metrology, test structures, and reference materials required for CMOS and Beyond devices and their constituent materials. He has performed a broad range of research in MOS devices and gate dielectrics including electrical characterization, physical characterization, and reliability physics. He has published over 40 peer-reviewed papers, written 2 book chapters, and given over 20 invited presentations. He is currently Technical Chair of the Semiconductor Interface Specialists Conference, and on the technical committees of the Workshop on Dielectrics in Microelectronics and the International Reliability Physics Symposium. He is a member of the International Technology Roadmap for Semiconductors Emerging Research Materials working group, and an adjunct faculty member at North Carolina State University.

Presentation Slides: PDF

Contact: P. M. Ketcham

Note: Visitors from outside NIST must contact Robin Bickel; (301) 975-3668; at least 24 hours in advance.