ITLApplied  Computational Mathematics Division
ACMD Seminar Series
Attractive Image NIST

Some New Tools for Simulating Nano-Scale Crystal Growth

Tim Schulze
University of Tennessee, Department of Mathematics

Monday, May 10, 2004 15:00-16:00,
NIST North (820), Room 145
Monday, May 10, 2004 13:00-14:00,
Room 4511

Abstract: In this talk I will begin by reviewing some general aspects of epitaxial crystal growth. I will then discuss a hybrid scheme for simulating epitaxial growth that combines two well-established models. Most of the crystal surface is well approximated by a homogeneous diffusion process. These homogeneous regions are separated by narrow regions which are better modeled using inhomogeneous random walks. In the hybrid scheme, the latter regions are simulated using Monte-Carlo methods which are coupled to the numerical solution of the diffusion equation in the homogeneous regions. The narrow regions which are modeled using Monte-Carlo methods evolve in time on the crystal surface, resulting in a complicated moving-boundary problem that must also be addressed. I will also discuss some aspects of current work on off-lattice Monte-Carlo simulation.

Presentation Slides: PDF

Contact: D. Anderson

Note: Visitors from outside NIST must contact Robin Bickel; (301) 975-3668; at least 24 hours in advance.

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