Some New Tools for Simulating Nano-Scale Crystal Growth
Tim Schulze
University of Tennessee, Department of Mathematics
Monday, May 10, 2004 15:00-16:00,
NIST North (820), Room 145
Gaithersburg
Monday, May 10, 2004 13:00-14:00,
Room 4511
Boulder
Abstract:
In this talk I will begin by reviewing some general aspects of
epitaxial crystal growth. I will then discuss a hybrid scheme for
simulating epitaxial growth that combines two well-established models.
Most of the crystal surface is well approximated by a homogeneous
diffusion process. These homogeneous regions are separated by narrow
regions which are better modeled using inhomogeneous random walks. In
the hybrid scheme, the latter regions are simulated using Monte-Carlo
methods which are coupled to the numerical solution of the diffusion
equation in the homogeneous regions. The narrow regions which are
modeled using Monte-Carlo methods evolve in time on the crystal
surface, resulting in a complicated moving-boundary problem that must
also be addressed. I will also discuss some aspects of current work
on off-lattice Monte-Carlo simulation.
Presentation Slides: PDF
Contact: D. AndersonNote: Visitors from outside NIST must contact
Robin Bickel; (301) 975-3668;
at least 24 hours in advance.
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