Some New Tools for Simulating NanoScale Crystal Growth
Tim Schulze University of Tennessee, Department of Mathematics
Monday, May 10, 2004 15:0016:00, NIST North (820), Room 145 Gaithersburg Monday, May 10, 2004 13:0014:00, Room 4511 Boulder
Abstract:
In this talk I will begin by reviewing some general aspects of
epitaxial crystal growth. I will then discuss a hybrid scheme for
simulating epitaxial growth that combines two wellestablished models.
Most of the crystal surface is well approximated by a homogeneous
diffusion process. These homogeneous regions are separated by narrow
regions which are better modeled using inhomogeneous random walks. In
the hybrid scheme, the latter regions are simulated using MonteCarlo
methods which are coupled to the numerical solution of the diffusion
equation in the homogeneous regions. The narrow regions which are
modeled using MonteCarlo methods evolve in time on the crystal
surface, resulting in a complicated movingboundary problem that must
also be addressed. I will also discuss some aspects of current work
on offlattice MonteCarlo simulation.
Presentation Slides: PDF
Contact: D. AndersonNote: Visitors from outside NIST must contact
Robin Bickel; (301) 9753668;
at least 24 hours in advance.
